The FM16W08-SG is a 64kB wide voltage nonvolatile byte wide F-RAM Memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM16W08 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process and it also features 2.7 to 5.5V wide operating voltage. These features make the FM16W08 ideal for nonvolatile memory applications requiring frequent or rapid writes.
- High-endurance 100 trillion read/writes
- NoDelay? Writes
- Advanced high-reliability ferroelectric process
- SRAM and EEPROM compatible
- No battery concerns
- Monolithic reliability
- True surface mount solution, no rework steps
- Superior for moisture, shock and vibration
- Resistant to negative voltage undershoots
- Low power consumption
计算机和计算机周边, 工业, 通信与网络, 消费电子产品
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