S29AL008J70TFI010,1791328,闪存, 8 Mbit, 1M x 8位 / 512K x 16位, CFI, TSOP, 48 引脚,CYPRESS SEMICONDUCTOR
laird代理商
专业代理销售laird(莱尔德)全系列产品-新加坡2号仓库
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索:    
热门搜索词:28B0500-100  IRF9540  保险丝  amphenol  4.7μF 63V 5mm  P沟道 8ohm SOT-23  2581138

S29AL008J70TFI010 - 

闪存, 8 Mbit, 1M x 8位 / 512K x 16位, CFI, TSOP, 48 引脚

CYPRESS SEMICONDUCTOR S29AL008J70TFI010
声明:图片仅供参考,请以实物为准!
制造商产品编号:
S29AL008J70TFI010
仓库库存编号:
1791328
技术数据表:
(EN)
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

S29AL008J70TFI010产品概述

The S29AL008J70TFI010 is a 8MB CMOS boot sector Flash Memory organized as 1048576 bytes or 524288 words. The word-wide data appears on DQ15-DQ0, the byte-wide data appears on DQ7-DQ0. This device is designed to be programmed in-system with the standard system 3VCC supply. The device can also be programmed in standard EPROM programmers. The device offers access times of up to 70ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The S29AL008J is entirely command set compatible with the JEDEC single-power-supply flash standard. Commands are written to the command register using standard microprocessor write timings.
  • Top boot sector device
  • Manufactured on 110nm process technology - Fully compatible with 200nm S29AL008D
  • Secured silicon sector region
  • Flexible sector architecture
  • Hardware method of locking a sector to prevent any program or erase operations within that sector
  • Reduces overall programming time when issuing multiple program command sequences
  • Pinout and software compatible with single-power supply flash
  • Superior inadvertent write protection
  • High performance
  • Ultralow power consumption
  • Cycling endurance - 1000000 cycles per sector typical
  • Data retention - 20 years typical
  • Erase suspend/erase resume
  • Data# polling and toggle bits
  • Provides a hardware method of detecting program or erase cycle completion
  • Hardware method to reset the device to reading array data

计算机和计算机周边, 工业, 通信与网络, 消费电子产品

S29AL008J70TFI010产品信息

  存储器容量  8Mbit  
  闪存配置  1M x 8位 / 512K x 16位  
  时钟频率  -  
  芯片接口类型  CFI  
  封装类型  TSOP  
  针脚数  48引脚  
  存取时间  70ns  
  电源电压最小值  2.7V  
  电源电压最大值  3.6V  
  工作温度最小值  -40°C  
  工作温度最高值  85°C  
  封装  每个  
  产品范围  3V Parallel NOR Flash Memories  
  MSL  MSL 3 - 168小时  
关键词         

S29AL008J70TFI010相关搜索

存储器容量 8Mbit  CYPRESS SEMICONDUCTOR 存储器容量 8Mbit  闪存 存储器容量 8Mbit  CYPRESS SEMICONDUCTOR 闪存 存储器容量 8Mbit   闪存配置 1M x 8位 / 512K x 16位  CYPRESS SEMICONDUCTOR 闪存配置 1M x 8位 / 512K x 16位  闪存 闪存配置 1M x 8位 / 512K x 16位  CYPRESS SEMICONDUCTOR 闪存 闪存配置 1M x 8位 / 512K x 16位   时钟频率 -  CYPRESS SEMICONDUCTOR 时钟频率 -  闪存 时钟频率 -  CYPRESS SEMICONDUCTOR 闪存 时钟频率 -   芯片接口类型 CFI  CYPRESS SEMICONDUCTOR 芯片接口类型 CFI  闪存 芯片接口类型 CFI  CYPRESS SEMICONDUCTOR 闪存 芯片接口类型 CFI   封装类型 TSOP  CYPRESS SEMICONDUCTOR 封装类型 TSOP  闪存 封装类型 TSOP  CYPRESS SEMICONDUCTOR 闪存 封装类型 TSOP   针脚数 48引脚  CYPRESS SEMICONDUCTOR 针脚数 48引脚  闪存 针脚数 48引脚  CYPRESS SEMICONDUCTOR 闪存 针脚数 48引脚   存取时间 70ns  CYPRESS SEMICONDUCTOR 存取时间 70ns  闪存 存取时间 70ns  CYPRESS SEMICONDUCTOR 闪存 存取时间 70ns   电源电压最小值 2.7V  CYPRESS SEMICONDUCTOR 电源电压最小值 2.7V  闪存 电源电压最小值 2.7V  CYPRESS SEMICONDUCTOR 闪存 电源电压最小值 2.7V   电源电压最大值 3.6V  CYPRESS SEMICONDUCTOR 电源电压最大值 3.6V  闪存 电源电压最大值 3.6V  CYPRESS SEMICONDUCTOR 闪存 电源电压最大值 3.6V   工作温度最小值 -40°C  CYPRESS SEMICONDUCTOR 工作温度最小值 -40°C  闪存 工作温度最小值 -40°C  CYPRESS SEMICONDUCTOR 闪存 工作温度最小值 -40°C   工作温度最高值 85°C  CYPRESS SEMICONDUCTOR 工作温度最高值 85°C  闪存 工作温度最高值 85°C  CYPRESS SEMICONDUCTOR 闪存 工作温度最高值 85°C   封装 每个  CYPRESS SEMICONDUCTOR 封装 每个  闪存 封装 每个  CYPRESS SEMICONDUCTOR 闪存 封装 每个   产品范围 3V Parallel NOR Flash Memories  CYPRESS SEMICONDUCTOR 产品范围 3V Parallel NOR Flash Memories  闪存 产品范围 3V Parallel NOR Flash Memories  CYPRESS SEMICONDUCTOR 闪存 产品范围 3V Parallel NOR Flash Memories   MSL MSL 3 - 168小时  CYPRESS SEMICONDUCTOR MSL MSL 3 - 168小时  闪存 MSL MSL 3 - 168小时  CYPRESS SEMICONDUCTOR 闪存 MSL MSL 3 - 168小时  
电话:400-900-3095
QQ:800152669

S29AL008J70TFI010产地与重量

原产地:
Thailand

进行最后一道重要生产流程所在的国家

RoHS 合规:
税则号:
85423261
重量(千克):
.006133
laird电子简介 | laird产品 | laird动态 | 按系列选型 | 按产品规格选型 | laird产品应用 | laird选型手册
Copyright © 2017 www.laird-tek.com All Rights Reserved. 技术支持:电子元器件 ICP备案证书号:粤ICP备11103613号
版权所有:深圳市创唯电子有限公司 客服电话:400-900-3095 企业QQ:800152669 邮箱:sales@szcwdz.com