The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density for low onstate resistance, rugged avalanche characteristics and less critical alignment steps. Applicable at switching applications.
Drain to source voltage (Vds) of 55V
Gate to source voltage of ±20V
Continuous drain current (Id) of 80A
Power dissipation (Pd) of 300W
Low on state resistance of 6.5mohm at Vgs 10V
Operating junction temperature range from -55°C to 175°C