产品分类：双极结晶体管阵列(BJT),规格：MSL -,
STMICROELECTRONICS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 500 mA, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 350 mA, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 100 V, 500 mA, DIP
ON SEMICONDUCTOR
晶体管阵列
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 45 V, 40 W, 4 A, 750 hFE, TO-225
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 100 V, 500 mA, DIP
ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 100 V, 15 W, 2 A, 500 hFE, TO-225
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 80 V, 50 W, 2 A, 500 hFE, TO-220AB
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 80 V, 1 W, 1.5 A, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, TO-78
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)
