产品分类：双极结晶体管阵列(BJT),规格：工作温度最高值 85°C,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
ON SEMICONDUCTOR
晶体管阵列
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 15 V, 750 mW, 50 mA, 100 hFE, SOIC
(EN)
ON SEMICONDUCTOR
达林顿晶体管 阵列, NPN, X7, 50V, 16-SOIC
(EN)
ON SEMICONDUCTOR
晶体管阵列
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 80 V, 1 W, 1.5 A, DIP
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
