规格：漏源电压, Vds 12V,
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 mA, 12 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 27 A, 12 V, 0.0023 ohm, 4.5 V, 1.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6.4 A, 12 V, 0.021 ohm, 4.5 V, 600 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 12 V, 0.0115 ohm, 4.5 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 12 V, 3.1 mohm, 4.5 V, 400 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.7 A, 12 V, 0.036 ohm, 4.5 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 12 V, 8.5 mohm, 4.5 V, 1.9 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 7.6 A, 12 V, 0.014 ohm, 4.5 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 34A, SOIC-8
(EN)
VISHAY
晶体管, N沟道
(EN)
VISHAY
MOSFET, N & P CHANNEL, 12V, 7.6A, POWERP
(EN)
VISHAY
场效应管, MOSFET, N沟道+P沟道, 12V, 4.5A, POWERPAK SC-70
(EN)
