规格：漏源电压, Vds 12V,
VISHAY
MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
(EN)
NXP
晶体管, 射频FET, 12 V, 30 mA, 200 mW, SOT-143B
(EN)NXP
晶体管, 射频FET, 12 V, 30 mA, 200 mW, SOT-143B
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 mA, 12 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 12 V, 8 mohm, 4.5 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 12 V, 8 mohm, 4.5 V, 1.9 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 12 V, 15 mohm, 4.5 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6.4 A, 12 V, 0.021 ohm, 4.5 V, 600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 12 V, 0.028 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2 A, 12 V, 0.028 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 50A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 6A, 1206
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 9.5A
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道+P沟道, 12V, 11.8A/-8.9A, SOIC-8, 整卷
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
(EN)VISHAY
场效应管, MOSFET, N通道, 12V, 22A, SOIC
(EN)
