规格：漏源电压, Vds 1kV,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.75 A, 1 kV, 2.7 ohm, 30 V, 3.75 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 1 kV, 390 mohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 36 A, 1 kV, 240 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 1 kV, 700 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 32 A, 1 kV, 0.32 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 24 A, 1 kV, 0.44 ohm, 10 V, 6.5 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 3.5 V
(EN)
TOSHIBA
功率场效应管, MOSFET, 通用, N沟道, 8 A, 1 kV, 1.5 ohm, 10 V, 3.5 V
(EN)
IXYS RF
晶体管, 射频FET, 1 kV, 12 A, 940 W, 50 MHz, DE-375
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.6 A, 1 kV, 7.1 ohm, 10 V, 5 V
(EN)IXYS RF
晶体管, 射频FET, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD
(EN)IXYS RF
晶体管, 射频FET, 1 kV, 21 A, 500 W, 500 kHz, TO-264
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 30 A, 1 kV, 400 mohm, 10 V, 5 V
(EN)IXYS RF
晶体管, 射频FET, 1 kV, 24 A, 600 W, 500 kHz, SOT-227B
(EN)
