规格：漏源电压, Vds 20V,
ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 60A, POWERPAK SO-8
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 20 V, 0.008 ohm, 4.5 V, 1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0033 ohm, 10 V, 2 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 5.5 A, 20 V, 0.03 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
(EN)
VISHAY
MOSFET, N CH, 20V, 19.8A, SOIC-8
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 100 mohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, N & P CHANNEL, 20V, 0.03OHM, 4A, 1206-8
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 19.5A, POWERPAK
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.13 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.029 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 0.055 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 700mA, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
NTE ELECTRONICS
射频场效应管, 双栅极, N沟道, 20V, TO72
(EN)
VISHAY
场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A
(EN)
