规格：漏源电压, Vds 20V,
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.5 A, 20 V, 0.029 ohm, 4.5 V, 1.3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 6.9 A, 20 V, 0.015 ohm, 4.5 V, 650 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.00125 ohm, 10 V, 2.5 V
(EN)NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
(EN)
VISHAY
MOSFET,N CHANNEL,DIODE,20V,35A,PPAK1212-8
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 25A, SC70-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
(EN)
