规格：漏源电压, Vds -20V,
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.12 ohm, -10 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.7 A, -20 V, 40 mohm, -4.5 V, 700 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 110 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2A, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.088 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13.5 A, -20 V, 0.0067 ohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 6A, SOT-223, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 1A, SuperSOT, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)
