规格：漏源电压, Vds -20V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -3.5A, SOIC-8, 整卷
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -16.7A, MICRO FOOT
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.073 ohm, -4.5 V, -1.3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.185 ohm, -4.5 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.2 A, -20 V, 0.35 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, POWERPAK SC-70
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.1A, MICROFET 2X2
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8
(EN)NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.7A, MICROFET 2X2
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.05 ohm, -4.5 V, -2 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, 200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.22 ohm, -4.5 V, -1 V
(EN)
