规格：漏源电压, Vds -20V,
INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -20 V, 250 mohm, -10 V, -3 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -2.4A, SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -1.9 A, -20 V, 127 mohm, -4.5 V, -900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1A, SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, SC-89
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 3.1A TO-236, 整卷
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.058 ohm, -4.5 V, -750 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)VISHAY
晶体管, P沟道
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 0.047 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -2.9 A, -20 V, 64 mohm, -4.5 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -460 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
