规格：漏源电压, Vds -20V,
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)
INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.019Ω, -7.8A, MICROFET-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)VISHAY
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 400mA, SOT-23
(EN)
VISHAY
晶体管, MOSFET, P沟道, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
MOSFET Transistor, P Channel, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.008 ohm, -10 V, 770 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
(EN)
