规格：漏源电压, Vds -20V,
VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -140 mA, -20 V, 8 ohm, -4.5 V, 900 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.026 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.003 ohm, -10 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, P沟道
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.6 A, -20 V, 0.036 ohm, -700 mV, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 4.2A, SC-88
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.032 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, P通道, MOSFET, -40V, 40A
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -20 V, 47 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -7.8A, -20V, MicroFET
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)VISHAY
MOSFET, P CHANNEL, -20V, -8A, TSOP-6
(EN)
