规格：漏源电压, Vds -20V,
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.5Ω, -350mA, SC-89-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.055 ohm, -4.5 V, -650 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3.1 A, -20 V, 0.06 ohm, -1 V, 1 V
(EN)
ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.028 ohm, -4.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 9 A, -20 V, 18 mohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.5 A, -20 V, 0.026 ohm, -4.5 V, -700 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -600 mA, -20 V, 0.7 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV
(EN)
VISHAY
MOSFET, DUAL P CHANNEL, -20V, -1.3A, SOT-363-6
(EN)
VISHAY
晶体管, P沟道
(EN)VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV
(EN)
