规格：漏源电压, Vds 150V,
VISHAY
场效应管, MOSFET, N通道, 150V, 30A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.041Ω, 4A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 25 A, 150 V, 0.038 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 150 V, 0.027 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.015 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.015 ohm, 10 V, 4 V
(EN)
