规格：漏源电压, Vds 30V,
NEXPERIA
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.21 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 154mA, SC-75
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 2.7A, SSOT
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 30 V, 12 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 mA, 30 V, 2.9 ohm, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.21 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1 ohm, 4 V, 1.4 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 12.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
(EN)
