规格：漏源电压, Vds 30V,
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.028 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0056 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 124 A, 30 V, 0.0034 ohm, 11.5 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0025 ohm, 10 V, 2.35 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.4 mohm, 10 V, 1.55 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.00165 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR
N CHANNEL MOSFET, 30V, 13.1A, DFN5
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0016 ohm, 10 V, 1.7 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 30A, SOIC-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.016 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)
