规格：漏源电压, Vds 30V,
VISHAY
MOSFET, DUAL N CHANNEL, 30V, 60A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 4 mohm, 10 V, 2.32 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 24A, POWERPAIR-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 30 V, 0.00505 ohm, 10 V, 1.68 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 13.5 A, 30 V, 0.0052 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 5.1 mohm, 10 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0024OHM, 42A, POWER 56-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0082 ohm, 10 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0029 ohm, 10 V, 1.3 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 25A, SOIC
(EN)
