规格：漏源电压, Vds 30V,
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 1.1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13.6 A, 30 V, 9.1 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 36W, TO-252
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 2.5A, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0046 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 30V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 30 V, 0.0028 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00096 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0071 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 30 V, 50 mohm, 16 V, 1.5 V
(EN)
