规格：漏源电压, Vds 30V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 156 A, 30 V, 0.0034 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 38 mohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 87 A, 30 V, 6.4 mohm, 8 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双路N和P通道, 6 A, 30 V, 0.019 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 45 mohm, 10 V, 2.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 60 mohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 30 V, 0.0014 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0057 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.002 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V
(EN)
