规格：漏源电压, Vds 30V,
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 135 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 20 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.004 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V
TEXAS INSTRUMENTS
单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 98 mohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1.5 A, 30 V, 340 mohm, 4.5 V, 1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 161A, D-PAK
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.01917 ohm, 10 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
