规格：漏源电压, Vds 30V,
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00105 ohm, 10 V, 1.46 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.038 ohm, 4.5 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 94 A, 30 V, 0.0047 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 0.0026 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.04 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 30 V, 0.0099 ohm, 10 V, 1.57 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 3.3 mohm, 10 V, 2.3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 160A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
