规格：漏源电压, Vds 30V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 4.5 V, 1.6 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.065 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 30V, 7.1A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.0169 ohm, 4.5 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 22 mohm, 10 V, 1.7 V
(EN)ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 30 V, 2.8 mohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0125 ohm, 4.5 V, 1.5 V
(EN)
