规格：漏源电压, Vds 30V,
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0063 ohm, 10 V, 1.9 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0029OHM, 42A, POWER 56-8
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 14.8 A, 30 V, 0.0043 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)
VISHAY
N CHANNEL MOSFET, 30V, 60A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 7.8A, WDFN6
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 30V, 40A, POWERPAIR-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.1 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR
MOSFET, N CHANNEL, 30V, 0.0056OHM, 44A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.3A, TSOP6
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 60A, 0.0051OHM, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 55 A, 30 V, 0.0014 ohm, 10 V, 1.7 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道 + 肖特基, 16 A, 30 V, 0.0075 ohm, 10 V, 1.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
