规格：漏源电压, Vds 30V,
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 11A, SOIC
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 116A, TO-220AB
INFINEON
场效应管, MOSFET, N沟道, 1.7W, 6-TSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 65A, 30V, 75W
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0049Ω, 15A, SOIC-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0117 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.01OHM, 10A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 49.6 mohm, 10 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
INFINEON
场效应管, MOSFET
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 30 V, 2950 μohm, 10 V, 1.7 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.044 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0087 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.021 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.019 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 2.5 V
(EN)
