规格：漏源电压, Vds 30V,
NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 7.5A, SOIC-8, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道+P沟道, 30V, 4.9A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 28 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 5.3A, SOT-23, 整卷
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V
(EN)
INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
NXP
场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
VISHAY
Transistor Polarity:Dual N Channel
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, N和P沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V
(EN)
