规格：漏源电压, Vds 30V,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23, 整卷
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 25 A, 30 V, 0.0076 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 5 ohm, 4 V, 1.5 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 45 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 车用, 30V, 160A, TO-220AB
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
(EN)
NXP
晶体管, 射频FET, 30 V, 13 mA, 250 mW, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0043 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
