规格：漏源电压, Vds 30V,
INFINEON
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0031 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0033 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 59 A, 30 V, 9 mohm, 10 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 30V, 60A, SON
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
