规格：漏源电压, Vds 30V,
NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0083 ohm, 10 V, 1.66 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 30 V, 890 μohm, 10 V, 1.7 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0094 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 1.1 ohm, 4.5 V, 1.5 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.028 ohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.092 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 3.7 A, 30 V, 0.042 ohm, 10 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 79 mohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.034 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 900mA, SC-70
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.055 ohm, 4.5 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.055 ohm, 4.5 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, SC-70
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 30 V, 0.185 ohm, 4.5 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
