规格：漏源电压, Vds 30V,
INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0043 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0048 ohm, 10 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.00205 ohm, 10 V, 1.1 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0034 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 57 A, 30 V, 4.7 mohm, 11.5 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.006 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, 带沟, N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 250 mohm, 10 V, 2.1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0098 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC, SMD
(EN)NXP
晶体管, 射频FET, 30 V, 13 mA, 250 mW, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
(EN)
