规格：漏源电压, Vds 30V,
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.013 ohm, 4.5 V, 600 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK 12
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.00205 ohm, 10 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.014 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.028 ohm, 10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 4 A, 30 V, 39 mohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.014 ohm, 16 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.4 mohm, 10 V, 1.55 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 70 A, 30 V, 7.6 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 4200 μohm, 10 V, 1 V
(EN)
