规格：漏源电压, Vds -30V,
INFINEON
双路场效应管, MOSFET, 双P沟道, 8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0039 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0039 ohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, P通道, MOSFET, -30V, -20A, SOIC, 整卷
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 0.0054 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 0.0054 ohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -15A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.01 ohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, 0.0136Ω, -9.8A, SOIC-8
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 0.048 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8 A, -30 V, 17 mohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 200 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK
(EN)
