规格：漏源电压, Vds -30V,
VISHAY
场效应管, MOSFET, P沟道, -30V, -2.7A
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0045 ohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.031 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.018 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
