规格：漏源电压, Vds -30V,
VISHAY
场效应管, MOSFET晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -100 mA, -30 V, 4 ohm, -4 V, -1 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -12A, SOIC
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 4mA
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.95A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0033 ohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.032 ohm, -10 V, -1.3 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -30 V, 0.195 ohm, -4.5 V
(EN)VISHAY
场效应管, P沟道, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V
(EN)VISHAY
场效应管, MOSFET, P沟道, 30V, 11.4A
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0032 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -5.4A, SOIC
(EN)
