规格：漏源电压, Vds -30V,
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 900 mA, -30 V, 0.25 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.9 A, -30 V, 0.036 ohm, -10 V, -2.2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -30V, 8.8A, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 5.4 mohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0037 ohm, -10 V, -1.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -2.7A, SOT-363-6
(EN)
