规格：漏源电压, Vds -30V,
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 2.5W
(EN)
INFINEON
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.009 ohm, -10 V, -1.5 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -20A, SOIC
(EN)VISHAY
P CHANNEL MOSFET, -30V, 12.6A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0086 ohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -30 V, 0.094 ohm, -10 V, -1.87 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
(EN)
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.045 ohm, -10 V, 1.7 V
(EN)
VISHAY
晶体管, P沟道
(EN)VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.05 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.4 A, -30 V, 0.014 ohm, -10 V, -1 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V
(EN)
