规格：漏源电压, Vds 200V,
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 10V, 18A TO-204AE
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
(EN)
SEMIKRON
单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.6 A, 200 V, 0.1 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
(EN)
VISHAY
MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 200V, 46A, TO-247AC
(EN)ROHM
晶体管, MOSFET, N沟道, 45 A, 200 V, 0.042 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 70 A, 200 V, 0.0305 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 12 A, 200 V, 0.25 ohm, 10 V, 5.25 V
(EN)
