规格：漏源电压, Vds 200V,
INFINEON
晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 98A, 超-220
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 35.4 A, 200 V, 0.0239 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.118 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, SC-70, 整卷
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 200 V
(EN)
SEMELAB
晶体管, MOSFET, 音频, N沟道, 16 A, 200 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 200V, 250mA TO-92
(EN)
