规格：漏源电压, Vds 25V,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00103 ohm, 10 V, 1.73 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 25 V, 0.0038 ohm, 20 V, 1.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 25 V, 0.0025 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00245 ohm, 10 V, 1.74 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00525 ohm, 10 V, 1.8 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 60 A, 25 V, 0.00646 ohm, 10 V, 1.76 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00493 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 1.8 mohm, 4.5 V, 1.4 V
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 56A, SON
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 64 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 49A, PQFN-5
(EN)
