规格：漏源电压, Vds -50V,
DIODES INC.
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, -5 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -170 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 170 mA, -50 V, 10 ohm, -5 V, -2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 170 mA, -50 V, 10 ohm, -5 V, -800 mV
(EN)
