规格：漏源电压, Vds 40V,
INFINEON
晶体管, MOSFET, N沟道, 130 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0025 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 60A, POWERPAKSO-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 40 V, 5 A, 73 W, 480 MHz, 520 MHz, PowerSO-10RF
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 202A, TO-220AB
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.001 ohm, 4.5 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 110 A, 40 V, 1.7 mohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V
(EN)
SEMELAB
晶体管, 射频FET, 40 V, 2 A, 17.5 W, 1 MHz, 2 GHz, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)
