规格：漏源电压, Vds 40V,
VISHAY
晶体管, N沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 3 mohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 40 V, 0.002 ohm, 10 V, 1.9 V
(EN)
INFINEON
MOSFET, N CHANNEL, 40V, 56A, TO-252AA-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.00055 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 7.4 A, 40 V, 0.0162 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 40 V, 2 A, 6 W, 1 GHz, SOT-89
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0024 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V
(EN)
NXP
晶体管, 射频FET, 40 V, 2 A, 31.25 W, 450 MHz, 520 MHz, PLD-1.5
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 107 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 4 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 362 A, 40 V, 0.0007 ohm, 10 V, 3 V
(EN)
