规格：漏源电压, Vds -40V,
VISHAY
MOSFET, P CHANNEL, -40V, -8.7A, SOIC-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 6.4 A, -40 V, 60 mohm, 10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -7.6 A, -40 V, 0.018 ohm, -10 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.013 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.041 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0029 ohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -30 A, -40 V, 0.019 ohm, -10 V, -2.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
INFINEON
场效应管, MOSFET
(EN)VISHAY
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0025 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8
(EN)
