规格：漏源电压, Vds 100V,
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 1.3A
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 51 A, 100 V, 12.7 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 100 V, 700 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N型
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.1 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 12 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0126 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)
