规格：漏源电压, Vds 100V,
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 60 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 7.7A, IPAK
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0168 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 69 A, 100 V, 0.0116 ohm, 10 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 290A, TO-247AC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 90A, TO-263-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 16A, D-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0155 ohm, 10 V, 2.7 V
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.04 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 18A, POWERPAK 1212-8
(EN)
