规格：漏源电压, Vds 100V,
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 20 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 58 mohm, 10 V, 5 V
(EN)
