规格：漏源电压, Vds 100V,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00445 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0031 ohm, 10 V, 2.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 75 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 0.0075 ohm, 10 V, 2.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 110 A, 100 V, 15 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 133 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 5.6 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V
(EN)
