规格：漏源电压, Vds 100V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0098 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, VSON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 9.3 A, 100 V, 0.12 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.002 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 100 V, 0.0033 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0019 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 0.011 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.16 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
